InGaAs single photon avalanche diodes (SPADs)
It is a solid-state photodetector similar to photodiodes and avalanche photodiodes (APDs), while also being very much linked with basic diode behaviors.
אנו משווקים בישראל דיודות ופוטודיודות מסוגים שונים ולשימושים שונים. אתם מוזמנים ליצור עימנו קשר לקבלת פרטים נוספים, ייעוץ ןהצעת מחיר
התקשרו עוד היום
נשמח לשוחח עימכם
For example
InGaAs Geiger mode avalanche photodiode (Built-in TEC cooling type)
| parameter | symbol | units | conditions | min | typ | max |
| Reverse breakdown voltage | BR | V | 22℃±3℃ ，ID =10μA | 60 | 80 | 90 |
| Responsivity | Re | A/W | 22℃±3℃，λ =1550nm ，M =1 | 0.8 | 0.85 | |
| Dark current | ID | nA | 22℃±3℃，M =10 | 0.1 | 0.3 | |
| Capacitance | C | pF | 22℃±3℃ ，M =10，f=1MHz | 0.25 | ||
| Temperature | η | V/K | -40℃ ~80℃，ID =10μA | 0.15 |
InGaAs Single-Photon Avalanche Diodes (SPADs)
Geiger mode parameters
| parameters | unit | Test conditions | min | typical | max |
| Single Photon Detection Efficiency (PDE) | % | -45℃, λ =1550nm,0.1ph/pulsePoisson distribution single photon source | 20 | ||
| Dack count rate (DCR) | kHz | -45℃, 1ns gate width，2MHz Gated repetition frequency，1MHz Optical repetition frequency，PDE=20% | 20* | ||
| After pulse probability (APP) | -45℃, 1ns gate width，2MHz Gated repetition frequency，1MHz Optical repetition frequency，PDE=20% | 1× 10-3 | |||
| Time jitter (Tj) | ps | -45℃, 1ns gate width ，2MHz Gated repetition frequency，PDE=20% | 100 |
Back-incidence InGaAs Single-Photon Avalanche Diode Array Chip Series
Spectral Range 950~1650nm; Pixel Num. 1×16; Active Diameter 50μm*16; Chip Dimensions 450μm×1050μm
Spectral Range 950~1650nm; Pixel Num. 4×4; Active Diameter 50μm*16; Chip Dimensions 800μm×800μm
Spectral Range 950~1650nm; Pixel Num.2×2; Active Diameter 50μm*4; Chip Dimensions 400μm×400μm
DC Characteristics Specifications *
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Active Diameter | Φ | + | 45 | 48 | 50 | μm |
| Spectral Range | Δλ | – | 950 | – | 1650 | nm |
| Breakdown Voltage | VBR | IR =10μA, PIN =0 | 50 | 70 | 90 | V |
| DC Dark Current | ID | VR =VBR-2V, PIN =0 | – | 1 | 10 | nA |
| 1550nm-Responsivity | R1550 | VR =VBR-2V, PIN =10μW (1550nm) | 8.0 | 8.5 | – | A/W |
| Capacitance | C | VR =VBR-2V, f=1MHz | – | 0.2 | 0.5 | pF |
| Vbr temperature coefficient | η | IR =10μA, PIN =0, -40~25℃ | – | 0.10 | 0.15 | V/℃ |
* All tests are taken at room temperature if not indicated.
+ This is the backside micro-lens dimension.
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Similar products that are in top demand today are other photodetectors that offer competing or more advanced features, often in different spectral ranges or with different operating principles. The market is driven by a need for higher efficiency, lower noise, and different form factors.
1. Silicon Photomultipliers (SiPMs)
These are arrays of silicon SPADs, but are often used as single, integrated devices. They are a top-demand product for their ability to detect a wide range of light levels, from single photons to bright flashes. SiPMs are popular in LiDAR, medical imaging (PET), and high-energy physics.
2. Superconducting Nanowire Single-Photon Detectors (SNSPDs)
SNSPDs are the highest-performance single-photon detectors available. They offer near-perfect quantum efficiency, extremely low dark counts, and picosecond timing jitter. While they require cryogenic cooling, their unparalleled performance makes them a top choice for cutting-edge quantum communication and scientific research.
3. Silicon Avalanche Photodiodes (APDs)
An APD is a standard photodetector with internal gain. When operated in “Geiger mode,” an APD functions as a SPAD. Silicon APDs are the most common type of single-photon detector for the visible and near-infrared (NIR) spectrum, widely used in long-range LiDAR and range-finding due to their low cost and high reliability.
4. Photomultiplier Tubes (PMTs)
PMTs are classic vacuum tube-based detectors. They are still in top demand for low-light applications where a large active area is required, such as in high-energy physics, scintillation counting, and astronomy. They offer high gain and very fast response times.
5. Quantum Dot (QD) Photodetectors
Quantum dot technology is an emerging and highly promising field. Quantum dot photodetectors offer a tunable spectral response that can be tailored for specific applications in the visible and infrared ranges. Their potential for low-cost, high-performance manufacturing makes them highly sought after in research and development.
6. InGaAs Avalanche Photodiodes (APDs)
While InGaAs SPADs are used for single-photon detection, InGaAs APDs are the workhorse for high-speed, high-sensitivity detection in the SWIR range for applications that don’t require single-photon sensitivity. They are in high demand in the fiber-optic telecommunications industry for long-distance data transmission.
7. HgCdTe (MCT) Photodiodes
Mercury Cadmium Telluride is a versatile semiconductor material whose bandgap can be tuned to operate in the SWIR, MWIR, and LWIR (long-wave infrared). Cooled HgCdTe photodiodes offer high performance and are a top choice for scientific cameras and high-end thermal imaging.
8. Silicon PIN Photodiodes
A PIN photodiode is the most common and simple type of semiconductor detector. It is highly valued for its linearity, low cost, and fast response. It’s the workhorse for visible light sensing and power measurement, and while it lacks internal gain, it is a crucial component in countless optical systems.
9. Pockels Cells
While not a detector, a Pockels cell is an electro-optic modulator that is often paired with a photodetector for high-speed, precision light control. It is in demand for applications that require fast pulsing or switching of a laser beam, such as in Q-switched lasers or laser communication.
10. Ge-on-Si SPADs
Germanium on Silicon (Ge-on-Si) SPADs are an emerging technology. They combine the mature silicon manufacturing platform with the SWIR-sensitivity of germanium, creating a detector that is more cost-effective to produce than InGaAs SPADs. They are in high demand for mass-market applications like LiDAR for autonomous vehicles.
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