InGaAs single photon avalanche diodes (SPADs)
It is a solid-state photodetector similar to photodiodes and avalanche photodiodes (APDs), while also being very much linked with basic diode behaviors.
אנו משווקים בישראל דיודות ופוטודיודות מסוגים שונים ולשימושים שונים. אתם מוזמנים ליצור עימנו קשר לקבלת פרטים נוספים, ייעוץ ןהצעת מחיר
התקשרו עוד היום
נשמח לשוחח עימכם
For example
InGaAs Geiger mode avalanche photodiode (Built-in TEC cooling type)
| parameter | symbol | units | conditions | min | typ | max |
| Reverse breakdown voltage | BR | V | 22℃±3℃ ，ID =10μA | 60 | 80 | 90 |
| Responsivity | Re | A/W | 22℃±3℃，λ =1550nm ，M =1 | 0.8 | 0.85 | |
| Dark current | ID | nA | 22℃±3℃，M =10 | 0.1 | 0.3 | |
| Capacitance | C | pF | 22℃±3℃ ，M =10，f=1MHz | 0.25 | ||
| Temperature | η | V/K | -40℃ ~80℃，ID =10μA | 0.15 |
InGaAs Single-Photon Avalanche Diodes (SPADs)
Geiger mode parameters
| parameters | unit | Test conditions | min | typical | max |
| Single Photon Detection Efficiency (PDE) | % | -45℃, λ =1550nm,0.1ph/pulsePoisson distribution single photon source | 20 | ||
| Dack count rate (DCR) | kHz | -45℃, 1ns gate width，2MHz Gated repetition frequency，1MHz Optical repetition frequency，PDE=20% | 20* | ||
| After pulse probability (APP) | -45℃, 1ns gate width，2MHz Gated repetition frequency，1MHz Optical repetition frequency，PDE=20% | 1× 10-3 | |||
| Time jitter (Tj) | ps | -45℃, 1ns gate width ，2MHz Gated repetition frequency，PDE=20% | 100 |
Back-incidence InGaAs Single-Photon Avalanche Diode Array Chip Series
Spectral Range 950~1650nm; Pixel Num. 1×16; Active Diameter 50μm*16; Chip Dimensions 450μm×1050μm
Spectral Range 950~1650nm; Pixel Num. 4×4; Active Diameter 50μm*16; Chip Dimensions 800μm×800μm
Spectral Range 950~1650nm; Pixel Num.2×2; Active Diameter 50μm*4; Chip Dimensions 400μm×400μm
DC Characteristics Specifications *
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Active Diameter | Φ | + | 45 | 48 | 50 | μm |
| Spectral Range | Δλ | – | 950 | – | 1650 | nm |
| Breakdown Voltage | VBR | IR =10μA, PIN =0 | 50 | 70 | 90 | V |
| DC Dark Current | ID | VR =VBR-2V, PIN =0 | – | 1 | 10 | nA |
| 1550nm-Responsivity | R1550 | VR =VBR-2V, PIN =10μW (1550nm) | 8.0 | 8.5 | – | A/W |
| Capacitance | C | VR =VBR-2V, f=1MHz | – | 0.2 | 0.5 | pF |
| Vbr temperature coefficient | η | IR =10μA, PIN =0, -40~25℃ | – | 0.10 | 0.15 | V/℃ |
* All tests are taken at room temperature if not indicated.
+ This is the backside micro-lens dimension.
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